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| 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * Low on-resistance N-channel: RDS(on) 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) 0.12 , VGS = -10 V, I D = -5 A * Capable of 4 V gate drive * Low drive current * High speed switching * High density mounting * Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4, 6, 11. P-ch Gate 5, 12. P-ch Source Absolute Maximum Ratings (Ta = 25C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 6 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Tch Tstg 2 2 1 Nch 60 20 10 40 10 42 4.8 150 Pch -60 20 -10 -40 -10 Unit V V A A A W W C C -55 to +150 2 6AM13 Electrical Characteristics (Ta = 25C) (1 Unit) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.06 0.08 9.5 860 450 140 10 50 180 110 1.0 120 Max -- -- 10 250 2.0 P channel Min -60 20 -- -- -1.0 Typ -- -- -- -- -- 0.09 0.12 8 Max -- -- 10 Unit V V A Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V*1 I D = 5 A, VGS = 4 V*1 I D = 5 A, VDS = 10 V*1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain I DSS current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: VGS(off) RDS(on) -250 A -2.0 0.12 0.18 -- V S pF pF pF ns ns ns ns V ns 0.075 -- 0.11 -- -- -- -- -- -- -- -- -- -- -- 5 -- -- -- -- -- -- -- -- -- 1400 -- 720 220 15 100 250 160 -1.0 200 -- -- -- -- -- -- -- -- I D = 5 A, VGS = 10 V, RL = 6 I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF/dt = 50 A/s 1. Pulse Test Polarity of test conditions for P channel device is reversed. 3 6AM13 Maximum Channel Dissipation Curve 6 Condition : Channel dissipation of each die is identical Channel Dissipation Pch (W) 5 Channel Dissipation Pch (W) 6 Device Operation 4 Device Operation 4 2 Device Operation 1 Device Operation 3 Maximum Channel Dissipation Curve 60 Condition : Channel dissipation of each die is identical 6 Device Operation 4 Device Operation 40 2 Device Operation 1 Device Operation 2 20 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (C) Case Temperature Tc (C) Maximum Safe Operation Area (P-Channel) - 50 - 30 PW 10 0 1 m 10 s s Typical Output Characteristics -50 -10 V -6 V -8 V -5 V -30 -4 V Pulse Test - 10 Drain Current I D (A) D -40 Drain Current ID (A) = 10 m s -3 -1 C s (1 O pe sh ra ot tio ) n (T c = - 0.3 Operation in this area is limited by RDS (on) Ta = 25C 25 C -20 ) -10 - 0.1 - 0.05 - 0.1 - 0.3 -1 -3 - 10 - 30 - 100 VGS = -3 V -8 -20 -4 -12 -16 Drain to Source Voltage VDS (V) 0 Drain to Source Voltage VDS (V) 4 6AM13 Typical Transfer Characteristics -20 TC = 25C VDS = -10 V Pulse Test -25C Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage -2.0 Pulse Test -1.6 -15 A -1.2 -10 A -0.8 -5 A -0.4 ID = -2 A -16 Drain Current ID (A) -12 75C -8 -4 0 -2 -5 -1 -3 -4 Gate to Source Voltage VGS (V) 0 -2 -6 -8 -4 -10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test VGS = -4 V -10 V 0.1 0.05 Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test VGS = -4 V -10 A -2, -5 A -15 A 0.2 0.20 0.15 0.10 VGS = -10 V -2, -5, -10 A 0.05 0.02 0.01 0.005 -1 -2 -5 -10 -20 -50 -100 Drain Current ID (A) 0 -40 0 80 120 40 Case Temperature TC (C) 160 5 6AM13 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 -25C TC = 25C 10 5 75C Reverse Recovery Time trr (ns) VDS = 10 V Pulse Test 20 500 Body to Drain Diode Reverse Recovery Time 200 100 50 2 1.0 0.5 -0.2 20 10 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test -5 -0.5 -1.0 -2 -10 Reverse Drain Current IDR (A) -20 -5 -10 -0.5 -1.0 -2 Drain Current ID (A) -20 5 -0.2 Typical Capacitance vs. Drain to Source Voltage 10,000 Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss 0 Dynamic Input Characteristics 0 Gate to Source Voltage VGS (V) VDD = -50 V -25 V -10 V VDD = -50 V -40 VDS -25 V -10 V -60 ID = -15 A VGS -12 -8 -20 -4 Crss 100 -80 -16 10 0 -20 -50 -10 -30 -40 Drain to Source Voltage VDS (V) -100 0 20 60 80 40 Gate Charge Qg (nc) -20 100 6 6AM13 Switching Characteristics 500 td (off) Reverse Drain Current IDR (A) 200 Switching Time t (ns) 100 tr 50 20 10 5 -0.2 . VGS = -10 V, VDD = -30V . PW = 2 s, duty < 1% tf -16 Pulse Test -20 Reverse Drain Current vs. Source to Drain Voltage -12 -8 -10 V -5 V VGS = 0,5 V td (on) -4 -0.5 -1.0 -2 -5 -10 Drain Current ID (A) -20 0 -0.8 -2.0 -0.4 -1.2 -1.6 Source to Drain Voltage VSD (V) 7 6AM13 Maximum Safe Operation Area (N-Channel) 50 30 10 10 0 Typical Output Characteristics s 20 10 V 4V 5V 10 Drain Current I D (A) s Pulse Test 3.5 V 3 1 D C Drain Current ID (A) PW = 1 s m s m (1 10 16 ) ot sh O pe 12 3.0 V 8 VGS = 2.5 V ra tio n (T c 0.3 Operation in this area is limited by RDS (on) Ta = 25C = 25 C ) 4 0.1 0.05 0.1 0.3 1 3 10 30 100 0 Drain to Source Voltage VDS (V) 6 2 4 8 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 20 16 Drain Current ID (A) VDS = 10 V Pulse Test Drain to Source Saturation Voltage VDS (on) (V) 2.0 1.6 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 12 1.2 20 A 8 0.8 10 A 0.4 ID = 5 A 4 75C 0 -25C TC= 25C 5 3 1 2 4 Gate to Source Voltage VGS (V) 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 8 6AM13 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance RDS (on) () 0.5 0.2 0.1 10 V 0.05 Pulse Test VGS = 4 V 0.20 Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.16 ID = 10 A 0.12 VGS = 4 V 5A 10 A 20 A 5A 0.08 0.02 0.01 0.005 1 2 5 20 50 10 Drain Current ID (A) 100 0.04 VGS = 10 V 0 -40 0 40 120 80 Case Temperature TC (C) 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 Reverse Recovery Time trr (ns) 20 10 5 75C VDS = 10 V Pulse Test -25C TC = 25C 1000 500 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 200 100 50 2 1.0 0.5 0.2 20 10 0.5 0.5 1.0 10 5 2 Drain Current ID (A) 20 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 9 6AM13 Typical Capacitance vs. Drain to Source Voltage 10000 Drain to Source Voltage VDS (V) 3000 Capacitance C (pF) 1000 300 100 30 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 0 8 16 24 32 Gate Charge Qg (nc) Ciss Coss Crss VGS = 0 f = 1MHz 100 80 Dynamic Input Characteristics 20 16 Gate to Source Voltage VGS (V) VDD = 50 V 25 V 10 V 60 VDS 12 40 20 VGS VDD = 50 V ID = 15 A 25 V 10 V 8 4 0 40 Switching Characteristics 500 td (off) tf Reverse Drain Current IDR (A) 20 16 Reverse Drain Current vs. Source to Drain Voltage Switching Time t (ns) 200 100 50 Pulse Test 12 10 V 15 V 5V VGS = 0, - 5 V tr 20 10 5 0.2 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 % * * 8 4 td (on) 0.5 10 1.0 5 2 Drain Current ID (A) 20 0 0.4 0.8 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 10 6AM13 Package Dimensions As of January, 2001 Unit: mm 31.3 +0.2 -0.3 24.4 0.1 16.4 0.3 5.0 0.2 3.8 3.2 3.0 2.0 0.1 3.2 10.0 0.3 2.7 16.0 0.3 2.54 1.4 0.85 0.1 10.5 0.5 2.2 0.2 0.55 +0.1 -0.06 1 2 3 4 5 6 7 8 9 10 11 12 Hitachi Code JEDEC EIAJ Mass (reference value) SP-12TA -- -- 6.1 g 11 6AM13 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12 |
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